Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

Atsushi Sugihara; Kazuya Suzuki; Terunobu Miyazaki; Shigemi Mizukami

doi:10.7567/JJAP.54.078002

Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film

Atsushi Sugihara, Kazuya Suzuki, Terunobu Miyazaki, Shigemi Mizukami

Advanced Institute for Materials Research (AIMR)

Tohoku University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D0₂₂ structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D0₂₂-Mn₃Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D0₂₂-Mn₃Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

Original language	English
Article number	078002
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.7567/JJAP.54.078002
Publication status	Published - 2015 Jul 1

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abstract = "We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.",

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AU - Sugihara, Atsushi

AU - Suzuki, Kazuya

AU - Miyazaki, Terunobu

AU - Mizukami, Shigemi

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N2 - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

AB - We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

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Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D0₂₂-Mn₃Ge film

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