Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

S. Ikeda; J. Hayakawa; Y. M. Lee; T. Tanikawa; F. Matsukura; H. Ohno

doi:10.1063/1.2176588

Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

We have investigated the spin tunneling transport in magnetic tunnel junctions (MTJs) with Co40 Fe40 B20, Co50 Fe50, and Co90 Fe10 free layers which were deposited on the lower electrode consisting of the same Co40 Fe40 B20 reference layer/MgO barrier. The tunnel magnetoresistance (TMR) ratio depends critically on the choice of the free layer; the TMR ratios up to 355% were obtained for the MTJs with Co40 Fe40 B20 free layers and up to 277% with Co50 Fe50 free layers, both of which have highly (001)-oriented bcc structures. No high TMR ratio was observed for the MTJs with Co90 Fe10 free layer having a polycrystalline fcc structure.

Original language	English
Article number	08A907
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2176588
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2176588

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title = "Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers",

abstract = "We have investigated the spin tunneling transport in magnetic tunnel junctions (MTJs) with Co40 Fe40 B20, Co50 Fe50, and Co90 Fe10 free layers which were deposited on the lower electrode consisting of the same Co40 Fe40 B20 reference layer/MgO barrier. The tunnel magnetoresistance (TMR) ratio depends critically on the choice of the free layer; the TMR ratios up to 355% were obtained for the MTJs with Co40 Fe40 B20 free layers and up to 277% with Co50 Fe50 free layers, both of which have highly (001)-oriented bcc structures. No high TMR ratio was observed for the MTJs with Co90 Fe10 free layer having a polycrystalline fcc structure.",

author = "S. Ikeda and J. Hayakawa and Lee, {Y. M.} and T. Tanikawa and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported by the IT-program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

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T1 - Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

AU - Ikeda, S.

AU - Hayakawa, J.

AU - Lee, Y. M.

AU - Tanikawa, T.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported by the IT-program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2006

Y1 - 2006

N2 - We have investigated the spin tunneling transport in magnetic tunnel junctions (MTJs) with Co40 Fe40 B20, Co50 Fe50, and Co90 Fe10 free layers which were deposited on the lower electrode consisting of the same Co40 Fe40 B20 reference layer/MgO barrier. The tunnel magnetoresistance (TMR) ratio depends critically on the choice of the free layer; the TMR ratios up to 355% were obtained for the MTJs with Co40 Fe40 B20 free layers and up to 277% with Co50 Fe50 free layers, both of which have highly (001)-oriented bcc structures. No high TMR ratio was observed for the MTJs with Co90 Fe10 free layer having a polycrystalline fcc structure.

AB - We have investigated the spin tunneling transport in magnetic tunnel junctions (MTJs) with Co40 Fe40 B20, Co50 Fe50, and Co90 Fe10 free layers which were deposited on the lower electrode consisting of the same Co40 Fe40 B20 reference layer/MgO barrier. The tunnel magnetoresistance (TMR) ratio depends critically on the choice of the free layer; the TMR ratios up to 355% were obtained for the MTJs with Co40 Fe40 B20 free layers and up to 277% with Co50 Fe50 free layers, both of which have highly (001)-oriented bcc structures. No high TMR ratio was observed for the MTJs with Co90 Fe10 free layer having a polycrystalline fcc structure.

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Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

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