Tunnel magnetoresistance in textured Co2 FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO2 amorphous substrate

Zhenchao Wen; Hiroaki Sukegawa; Seiji Mitani; Koichiro Inomata

doi:10.1063/1.3587640

Tunnel magnetoresistance in textured Co₂ FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO₂ amorphous substrate

Zhenchao Wen, Hiroaki Sukegawa, Seiji Mitani, Koichiro Inomata

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Magnetic tunnel junctions with B2 -ordered Co₂ FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/ SiO₂ amorphous substrates. A Co₂ FeAl/MgO/ Co₅₀ Fe₅₀ structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2 -Co₂ FeAl is one of the promising candidates for practical spintronic applications.

Original language	English
Article number	192505
Journal	Applied Physics Letters
Volume	98
Issue number	19
DOIs	https://doi.org/10.1063/1.3587640
Publication status	Published - 2011 May 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Tunnel magnetoresistance in textured Co2 FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO2 amorphous substrate",

abstract = "Magnetic tunnel junctions with B2 -ordered Co2 FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/ SiO2 amorphous substrates. A Co2 FeAl/MgO/ Co50 Fe50 structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2 -Co2 FeAl is one of the promising candidates for practical spintronic applications.",

author = "Zhenchao Wen and Hiroaki Sukegawa and Seiji Mitani and Koichiro Inomata",

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T1 - Tunnel magnetoresistance in textured Co2 FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO2 amorphous substrate

AU - Wen, Zhenchao

AU - Sukegawa, Hiroaki

AU - Mitani, Seiji

AU - Inomata, Koichiro

N1 - Funding Information: This work was partly supported by the CREST and JST-DFG.

PY - 2011/5/9

Y1 - 2011/5/9

N2 - Magnetic tunnel junctions with B2 -ordered Co2 FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/ SiO2 amorphous substrates. A Co2 FeAl/MgO/ Co50 Fe50 structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2 -Co2 FeAl is one of the promising candidates for practical spintronic applications.

AB - Magnetic tunnel junctions with B2 -ordered Co2 FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/ SiO2 amorphous substrates. A Co2 FeAl/MgO/ Co50 Fe50 structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2 -Co2 FeAl is one of the promising candidates for practical spintronic applications.

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Tunnel magnetoresistance in textured Co₂ FeAl/MgO/CoFe magnetic tunnel junctions on a Si/ SiO₂ amorphous substrate

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