@article{959e51540da440e4b07c76a8b885a2a4,
title = "Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions",
abstract = "The authors fabricated double MgO barrier magnetic tunnel junctions (MTJs) with 3-nm-thick Co40 Fe40 B20 free layer. When annealed at 350 °C, tunnel magnetoresistance (TMR) ratio at room temperature was 130%, much lower than that (297%) of single MgO barrier MTJs processed and annealed under the same condition. The middle CoFeB free layer sandwiched between the two MgO barriers was found to be mostly amorphous. Replacement of the Co40 Fe40 B20 free layer by a highly oriented Co50 Fe50 layer and a composite Co50 Fe50 / Co40 Fe40 B20 layer led to the enhanced TMR ratios up to 165% and 212% at annealing temperature of 350 °C, respectively.",
author = "Gan, {H. D.} and S. Ikeda and W. Shiga and J. Hayakawa and K. Miura and H. Yamamoto and H. Hasegawa and F. Matsukura and T. Ohkubo and K. Hono and H. Ohno",
note = "Funding Information: This work was partially supported by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT, by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”, and by a Grant-in-Aid for Scientific Research in Priority Area “Creation and Control of Spin Current,” by the World Premier Research Center Initiative (WPI Initative) on Materials Nanoarchitectronics of MEXT. The authors wish to thank Y. Ohno and K. Ohtani for discussion and I. Morita and T. Hirata for their valuable discussions and technical support in MTJ fabrication.",
year = "2010",
doi = "10.1063/1.3429594",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",
}