TY - JOUR
T1 - Tunnel magnetoresistance properties of double MgO-barrier magnetic tunnel junctions with different free-layer alloy compositions and structures
AU - Gan, Huadong
AU - Ikeda, Shoji
AU - Yamanouchi, Michihiko
AU - Miura, Katsuya
AU - Mizunuma, Kotaro
AU - Hayakawa, Jun
AU - Matsukura, Fumihiro
AU - Ohno, Hideo
N1 - Funding Information:
This work was supported by the “Funding Program for World-Leading Innovative R & D on Science and Technology (FIRST Program)” of JSPS and the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology of MEXT. The authors wish to thank I. Morita, T. Hirata, and H. Iwanuma for technical support in MTJ fabrication.
PY - 2011/6
Y1 - 2011/6
N2 - We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe 75)100-xBx free-layers with x= 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The X-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)85B15 free-layer sputtered at 0.88 and 1.77 W/cm2.
AB - We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe 75)100-xBx free-layers with x= 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The X-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)85B15 free-layer sputtered at 0.88 and 1.77 W/cm2.
KW - MgO barrier
KW - sputtering condition
KW - tunnel magnetoresistance
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U2 - 10.1109/TMAG.2010.2104137
DO - 10.1109/TMAG.2010.2104137
M3 - Article
AN - SCOPUS:79957814965
SN - 0018-9464
VL - 47
SP - 1567
EP - 1570
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 6 PART 1
M1 - 5772191
ER -