TY - JOUR
T1 - Tunnel-type magneto-dielectric effect and its annealing study in CoSiO2 granular films
AU - Cao, Yang
AU - Kobayashi, Nobukiyo
AU - Ohnuma, Shigehiro
AU - Masumoto, Hiroshi
N1 - Funding Information:
This work has been funded by the JSPS KAKENHI Grant-in-Aid No. 17H03385. This work is a cooperative program (Proposal No. 16G0207) of the CRDAM-IMR, Tohoku University. The authors wish to express their thanks to Dr. T. Miyazaki for the TEM observations and Ms. K. Oomura for assistance with XPS measurements.
Publisher Copyright:
© 2018 The Japan Institute of Metals and Materials.
PY - 2018
Y1 - 2018
N2 - Tunnel-type magneto-dielectric (TMD) effect arising from the spin-dependent quantum tunneling between nano-sized granular pairs, has opened up new route for room temperature magnetoelectric fields. We first investigated the TMD properties in metal-oxide (CoSiO2) granular films and their annealing effect in this work. Results show that the films exhibit a TMD ratio (¾0=¾00) of 1% with high electrical resistivity of >108 µ3·m and intermediate optical transmittance in Co0.24(SiO2)0.76 films. Annealing investigations suggest that the samples remain TMD response up to 573 K, and further increment in annealing temperature leads to the inter-diffusion between Co and SiO2 interfaces, thus producing the increasing oxidation of metallic Co. This study demonstrates the possibility of TMD effect in metal-oxide composite materials, and may be desirable for a variety of other wide oxide-based candidates for magnetoelectric device applications.
AB - Tunnel-type magneto-dielectric (TMD) effect arising from the spin-dependent quantum tunneling between nano-sized granular pairs, has opened up new route for room temperature magnetoelectric fields. We first investigated the TMD properties in metal-oxide (CoSiO2) granular films and their annealing effect in this work. Results show that the films exhibit a TMD ratio (¾0=¾00) of 1% with high electrical resistivity of >108 µ3·m and intermediate optical transmittance in Co0.24(SiO2)0.76 films. Annealing investigations suggest that the samples remain TMD response up to 573 K, and further increment in annealing temperature leads to the inter-diffusion between Co and SiO2 interfaces, thus producing the increasing oxidation of metallic Co. This study demonstrates the possibility of TMD effect in metal-oxide composite materials, and may be desirable for a variety of other wide oxide-based candidates for magnetoelectric device applications.
KW - Annealing effect
KW - Granular nano-composites
KW - Magneto-dielectric properties
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U2 - 10.2320/matertrans.MBW201712
DO - 10.2320/matertrans.MBW201712
M3 - Article
AN - SCOPUS:85045108596
SN - 1345-9678
VL - 59
SP - 585
EP - 589
JO - Materials Transactions
JF - Materials Transactions
IS - 4
ER -