Abstract
We develop an analytical device model for a graphene field-effect transistor. Using this model, we calculate its current-voltage characteristics at sufficiently high gate voltages when a n-p-n (p-n-p) lateral junction is formed in the transistor channel and the source-drain current is associated with the interband tunneling through this junction.
| Original language | English |
|---|---|
| Article number | 013001 |
| Journal | Applied Physics Express |
| Volume | 1 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jan |