Tunneling current-voltage characteristics of graphene field-effect transistor

Victor Ryzhii, Maxim Ryzhii, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


We develop an analytical device model for a graphene field-effect transistor. Using this model, we calculate its current-voltage characteristics at sufficiently high gate voltages when a n-p-n (p-n-p) lateral junction is formed in the transistor channel and the source-drain current is associated with the interband tunneling through this junction.

Original languageEnglish
Article number013001
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2008 Jan


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