TY - JOUR
T1 - Tunneling electroresistance of MgZnO-based tunnel junctions
AU - Belmoubarik, Mohamed
AU - Al-Mahdawi, Muftah
AU - Obata, Masao
AU - Yoshikawa, Daiki
AU - Sato, Hideyuki
AU - Nozaki, Tomohiro
AU - Oda, Tatsuki
AU - Sahashi, Masashi
N1 - Funding Information:
This work was funded by the Japan Society for the Promotion of Science (Grant No. 25-5806) and partially supported by the Kanazawa University SAKIGAKE Project. The first-principles calculation was performed using the facilities of the Supercomputer Center, Institute for Solid State Physics, University of Tokyo, Japan. The authors are thankful to Haruyuki Endo of Iwate Industrial Research Institute, Japan, for helping in the samples preparation.
Publisher Copyright:
© 2016 Author(s).
PY - 2016/10/24
Y1 - 2016/10/24
N2 - We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at ±1 V and exhibited a TER ratio of 360%-490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 μC/cm2 for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration.
AB - We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at ±1 V and exhibited a TER ratio of 360%-490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 μC/cm2 for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration.
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U2 - 10.1063/1.4966180
DO - 10.1063/1.4966180
M3 - Article
AN - SCOPUS:84994048446
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 17
M1 - 173507
ER -