Conductance-voltage (G-V) and current-voltage (J-V) measurements were applied to reveal the tunneling mechanisms of GaAs ultra-shallow sidewall tunnel junctions, which were fabricated by molecular layer epitaxy. From the G-V results, peaks were detected at 2, 12 and 14 THz at 6 K. In the J-V measurements, the fine structure near the peak voltage and a step in the tunneling current in the negative resistance region can also be observed. The tunneling mechanism is discussed in terms of the band transition, deep level and phonon-assisted tunneling. (Graph Presented) The differential conductance-voltage characteristics of the GaAs ultrashallow sidewall tunnel junction.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics