Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction

Takeo Ohno, Yutaka Oyama, Shota Sato, Jun Ichi Nishizawa

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Conductance-voltage (G-V) and current-voltage (J-V) measurements were applied to reveal the tunneling mechanisms of GaAs ultra-shallow sidewall tunnel junctions, which were fabricated by molecular layer epitaxy. From the G-V results, peaks were detected at 2, 12 and 14 THz at 6 K. In the J-V measurements, the fine structure near the peak voltage and a step in the tunneling current in the negative resistance region can also be observed. The tunneling mechanism is discussed in terms of the band transition, deep level and phonon-assisted tunneling. (Graph Presented) The differential conductance-voltage characteristics of the GaAs ultrashallow sidewall tunnel junction.

Original languageEnglish
Pages (from-to)2882-2885
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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