Abstract
Conductance-voltage (G-V) and current-voltage (J-V) measurements were applied to reveal the tunneling mechanisms of GaAs ultra-shallow sidewall tunnel junctions, which were fabricated by molecular layer epitaxy. From the G-V results, peaks were detected at 2, 12 and 14 THz at 6 K. In the J-V measurements, the fine structure near the peak voltage and a step in the tunneling current in the negative resistance region can also be observed. The tunneling mechanism is discussed in terms of the band transition, deep level and phonon-assisted tunneling. (Graph Presented) The differential conductance-voltage characteristics of the GaAs ultrashallow sidewall tunnel junction.
| Original language | English |
|---|---|
| Pages (from-to) | 2882-2885 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18 |
ASJC Scopus subject areas
- Condensed Matter Physics