Tunneling recombination in optically pumped graphene with electron-hole puddles

V. Ryzhii, M. Ryzhii, T. Otsuji

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8 Citations (Scopus)


We evaluate recombination of electrons and holes in optically pumped graphene associated with the interband tunneling between electron-hole puddles and calculate the recombination rate and time. It is demonstrated that this mechanism can be dominant in a wide range of pumping intensities. We show that the tunneling recombination rate and time are nonmonotonic functions of the quasi-Fermi energies of electrons and holes and optical pumping intensity. This can result in hysteresis phenomena.

Original languageEnglish
Article number173504
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2011 Oct 24


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