Abstract
Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, tsu have been observed in a series of (2.6 nm Fe/tSi nm Si)22 multilayers. One of the AF-couplings was observed at around tSi = 1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for tSi thicker than 1.5 nm with a minimum around tSi = 2.5 nm, and was almost temperature independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.
Original language | English |
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Pages (from-to) | L1670-L1672 |
Journal | Japanese journal of applied physics |
Volume | 33 |
Issue number | 12 A |
DOIs | |
Publication status | Published - 1994 Dec |
Externally published | Yes |
Keywords
- Interlayer coupling
- Iron
- Magnetoresistance
- Multilayers
- Semiconductor
- Silicon
- Temperature dependence
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)