Two-dimensional growth of InSb thin films on GaAs(111)A substrates

K. Kanisawa, H. Yamaguchi, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)


Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2000 Jan 31


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