Two-dimensional growth of InSb thin films on GaAs(111)A substrates

K. Kanisawa; H. Yamaguchi; Y. Hirayama

doi:10.1063/1.125826

Two-dimensional growth of InSb thin films on GaAs(111)A substrates

K. Kanisawa, H. Yamaguchi, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	5
DOIs	https://doi.org/10.1063/1.125826
Publication status	Published - 2000 Jan 31

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N2 - Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.

AB - Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.

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Two-dimensional growth of InSb thin films on GaAs(111)A substrates

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