Two-port type ferromagnetic RF integrated inductor

Masahiro Yamaguchi; Takashi Kuribara; Ken Ichi Arai

Two-port type ferromagnetic RF integrated inductor

Masahiro Yamaguchi, Takashi Kuribara, Ken Ichi Arai

ENG - Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co₈₅Nb₁₂Zr₃ film with slits effectively enhanced the inductance up to 5 GHz.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 2002 Jan 1
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: 2002 Jun 2 → 2002 Jun 7

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Two-port type ferromagnetic RF integrated inductor",

abstract = "Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co85Nb12Zr3 film with slits effectively enhanced the inductance up to 5 GHz.",

author = "Masahiro Yamaguchi and Takashi Kuribara and Arai, {Ken Ichi}",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "1",

pages = "197--200",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

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TY - JOUR

T1 - Two-port type ferromagnetic RF integrated inductor

AU - Yamaguchi, Masahiro

AU - Kuribara, Takashi

AU - Arai, Ken Ichi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co85Nb12Zr3 film with slits effectively enhanced the inductance up to 5 GHz.

AB - Two-port type rf integrated inductor with on-top magnetic layer was fabricated. Equivalent circuit analysis of the ferromagnetic RF integrated inductor was performed for the first time. Structure of the possible equivalent circuit is proposed. Parasitic capacitance of the ferromagnetic film is negligibly small if the film is applied slits. Ferromagnetic Co85Nb12Zr3 film with slits effectively enhanced the inductance up to 5 GHz.

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M3 - Conference article

AN - SCOPUS:0036078393

SN - 0149-645X

VL - 1

SP - 197

EP - 200

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

Two-port type ferromagnetic RF integrated inductor

Abstract

ASJC Scopus subject areas

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