Two-step MBE growth of ZnO layers on electron beam exposed (1 1 1)CaF2

H. J. Ko, Y. F. Chen, J. M. Ko, T. Hanada, Z. Zhu, T. Fukuda, T. Yao

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40 Citations (Scopus)


ZnO films are grown on (1 1 1)CaF2 by RF-plasma assisted two-step MBE. Low-temperature ZnO buffer layers with thickness below 10 nm are deposited on (1 1 1)CaF2 surfaces below 300 °C. The initial growth of ZnO overlayers at high temperatures on the low-temperature buffer layers is governed by three-dimensional growth. As the growth proceeded, both the surface morphology and crystallinity recover. The typical FWHM value of (0 0 0 2) ω-rocking curve is 0.46°. The epitaxy relationship is as follows: ZnO(0 0 0 1)∥CaF2(1 1 1), and [2 1̄ 1̄ 0 ]ZnO∥[1̄ 1 0]CaF2. The e-beam pre-exposure time is optimized by evaluating ZnO overlayers in terms of crystal quality and surface morphology. The optimized e-beam pre-exposure time is determined to be 100 s at an emission current of 20 μA for a substrate temperature of 600 °C.

Original languageEnglish
Pages (from-to)87-94
Number of pages8
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 1999 Nov


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