Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film

Qizhen Xue; Q. K. Xue; Y. Hasegawa; I. S.T. Tsong; T. Sakurai

doi:10.1063/1.123883

Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film

Qizhen Xue, Q. K. Xue, Y. Hasegawa, I. S.T. Tsong, T. Sakurai

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H₂/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.

Original language	English
Pages (from-to)	2468-2470
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	17
DOIs	https://doi.org/10.1063/1.123883
Publication status	Published - 1999 Apr 26

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H2/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.",

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AU - Xue, Qizhen

AU - Xue, Q. K.

AU - Hasegawa, Y.

AU - Tsong, I. S.T.

AU - Sakurai, T.

PY - 1999/4/26

Y1 - 1999/4/26

N2 - A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H2/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.

AB - A two-step method which combines hydrogen treatment and in situ UHV Si beam etching has been developed. The advantage of this combined H2/Si etching to prepare atomically clean 6H-SiC(0001) surface is discussed using scanning tunneling microscopy (STM). A quality GaN thin film evidenced by flat morphology and well-defined superstructures has been grown on this substrate.

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Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film

Abstract

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