Ultimate top-down etching processes for future nanoscale devices

Seiji Samukawa; Kazuhiko Endo

doi:10.1109/ICSICT.2006.306301

Ultimate top-down etching processes for future nanoscale devices

Seiji Samukawa, Kazuhiko Endo

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	462-465
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306301
Publication status	Published - 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	06/10/23 → 06/10/26

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10.1109/ICSICT.2006.306301

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Samukawa, S., & Endo, K. (2006). Ultimate top-down etching processes for future nanoscale devices. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 462-465). Article 4098136 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306301

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title = "Ultimate top-down etching processes for future nanoscale devices",

abstract = "Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.",

author = "Seiji Samukawa and Kazuhiko Endo",

year = "2006",

doi = "10.1109/ICSICT.2006.306301",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "462--465",

booktitle = "ICSICT-2006",

address = "United States",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

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Samukawa, S & Endo, K 2006, Ultimate top-down etching processes for future nanoscale devices. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098136, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 462-465, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06/10/23. https://doi.org/10.1109/ICSICT.2006.306301

Ultimate top-down etching processes for future nanoscale devices. / Samukawa, Seiji; Endo, Kazuhiko.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 462-465 4098136 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Samukawa, Seiji

AU - Endo, Kazuhiko

PY - 2006

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N2 - Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

AB - Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

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T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

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T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

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Samukawa S, Endo K. Ultimate top-down etching processes for future nanoscale devices. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 462-465. 4098136. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306301

Ultimate top-down etching processes for future nanoscale devices

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