TY - GEN
T1 - Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability
AU - Horio, Masafumi
AU - Iizuka, Yuji
AU - Ikeda, Yoshinari
AU - Mochizuki, Eiji
AU - Takahashi, Yoshikazu
PY - 2012
Y1 - 2012
N2 - Aluminium wirebond-less power module structure was investigated and presented in ISPSD 2011 [1]. The features of this structure are high-density packaging with Copper pins connection and power circuit board, low thermal resistance with thick Copper block on Silicon Nitride ceramic substrate and high reliability with epoxy resin moulding. This paper introduces Silicon Carbide MOSFET power module with this developed structure. High temperature operating capability up to 200°C is achieved with newly developed epoxy resin and Silver sintering technology. Low internal inductance is designed by laminating current paths to take an advantage of developed structure. SiC MOSFET 100A/1200V module was designed. Loss evaluation with this SiC module shows superior performance with SiC devices and also with developed structure.
AB - Aluminium wirebond-less power module structure was investigated and presented in ISPSD 2011 [1]. The features of this structure are high-density packaging with Copper pins connection and power circuit board, low thermal resistance with thick Copper block on Silicon Nitride ceramic substrate and high reliability with epoxy resin moulding. This paper introduces Silicon Carbide MOSFET power module with this developed structure. High temperature operating capability up to 200°C is achieved with newly developed epoxy resin and Silver sintering technology. Low internal inductance is designed by laminating current paths to take an advantage of developed structure. SiC MOSFET 100A/1200V module was designed. Loss evaluation with this SiC module shows superior performance with SiC devices and also with developed structure.
KW - SiC power module
KW - Silver sintering
KW - epoxy resin moulding
UR - http://www.scopus.com/inward/record.url?scp=84864742647&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864742647&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2012.6229028
DO - 10.1109/ISPSD.2012.6229028
M3 - Conference contribution
AN - SCOPUS:84864742647
SN - 9781457715952
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 81
EP - 84
BT - Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
T2 - 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Y2 - 3 June 2012 through 7 June 2012
ER -