TY - GEN
T1 - Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes
AU - Ikeda, Yoshinari
AU - Nashida, Norihiro
AU - Horio, Masafumi
AU - Takubo, Hiromu
AU - Takahashi, Yoshikazu
PY - 2011/5/13
Y1 - 2011/5/13
N2 - An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.
AB - An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.
UR - http://www.scopus.com/inward/record.url?scp=79955752378&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955752378&partnerID=8YFLogxK
U2 - 10.1109/APEC.2011.5744760
DO - 10.1109/APEC.2011.5744760
M3 - Conference contribution
AN - SCOPUS:79955752378
SN - 9781424480845
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 1298
EP - 1300
BT - 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
T2 - 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
Y2 - 6 March 2011 through 10 March 2011
ER -