Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

E. Sano; K. Sano; T. Otsuji; K. Kurishima; S. Yamahata

doi:10.1049/el:19970672

Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

E. Sano, K. Sano, T. Otsuji, K. Kurishima, S. Yamahata

RIEC - Information Communication Platforms Division

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A first 40Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54mW.

Original language	English
Pages (from-to)	1047-1048
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1049/el:19970672
Publication status	Published - 1997 Jun 5

Keywords

Integrated optoelectronics
Optical receivers

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10.1049/el:19970672

Cite this

@article{978afe3d63564316994794b8cff71984,

title = "Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors",

abstract = "A first 40Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54mW.",

keywords = "Integrated optoelectronics, Optical receivers",

author = "E. Sano and K. Sano and T. Otsuji and K. Kurishima and S. Yamahata",

year = "1997",

month = jun,

day = "5",

doi = "10.1049/el:19970672",

language = "English",

volume = "33",

pages = "1047--1048",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "12",

}

TY - JOUR

T1 - Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

AU - Sano, E.

AU - Sano, K.

AU - Otsuji, T.

AU - Kurishima, K.

AU - Yamahata, S.

PY - 1997/6/5

Y1 - 1997/6/5

N2 - A first 40Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54mW.

AB - A first 40Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54mW.

KW - Integrated optoelectronics

KW - Optical receivers

UR - http://www.scopus.com/inward/record.url?scp=0031554316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031554316&partnerID=8YFLogxK

U2 - 10.1049/el:19970672

DO - 10.1049/el:19970672

M3 - Article

AN - SCOPUS:0031554316

SN - 0013-5194

VL - 33

SP - 1047

EP - 1048

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

Abstract

Keywords

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