Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Katsuyoshi Washio, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Makoto Miura, Katsuya Oda, Isao Suzumura, Tatsuya Tominari, Takashi Hashimoto

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


An ultra-high-speed scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz. It was indicated that this SiGe HBT technology will play an important role in ultra-high-speed optical-fiber-link systems and millimeter-wave communication systems.

Original languageEnglish
Pages (from-to)767-770
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs'. Together they form a unique fingerprint.

Cite this