Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Katsuyoshi Washio; Eiji Ohue; Reiko Hayami; Akihiro Kodama; Hiromi Shimamoto; Makoto Miura; Katsuya Oda; Isao Suzumura; Tatsuya Tominari; Takashi Hashimoto

Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Katsuyoshi Washio, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Makoto Miura, Katsuya Oda, Isao Suzumura, Tatsuya Tominari, Takashi Hashimoto

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

An ultra-high-speed scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz. It was indicated that this SiGe HBT technology will play an important role in ultra-high-speed optical-fiber-link systems and millimeter-wave communication systems.

Original language	English
Pages (from-to)	767-770
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs",

abstract = "An ultra-high-speed scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz. It was indicated that this SiGe HBT technology will play an important role in ultra-high-speed optical-fiber-link systems and millimeter-wave communication systems.",

author = "Katsuyoshi Washio and Eiji Ohue and Reiko Hayami and Akihiro Kodama and Hiromi Shimamoto and Makoto Miura and Katsuya Oda and Isao Suzumura and Tatsuya Tominari and Takashi Hashimoto",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "767--770",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

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TY - JOUR

T1 - Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

AU - Washio, Katsuyoshi

AU - Ohue, Eiji

AU - Hayami, Reiko

AU - Kodama, Akihiro

AU - Shimamoto, Hiromi

AU - Miura, Makoto

AU - Oda, Katsuya

AU - Suzumura, Isao

AU - Tominari, Tatsuya

AU - Hashimoto, Takashi

PY - 2002/12/1

Y1 - 2002/12/1

N2 - An ultra-high-speed scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz. It was indicated that this SiGe HBT technology will play an important role in ultra-high-speed optical-fiber-link systems and millimeter-wave communication systems.

AB - An ultra-high-speed scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz. It was indicated that this SiGe HBT technology will play an important role in ultra-high-speed optical-fiber-link systems and millimeter-wave communication systems.

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M3 - Conference article

AN - SCOPUS:0036923796

SN - 0163-1918

SP - 767

EP - 770

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Abstract

ASJC Scopus subject areas

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