Ultra-low series resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D electrodes for advanced CMOS platform

Rihito Kuroda; Hiroaki Tanaka; Yukihisa Nakao; Akinobu Teramoto; Naoto Miyamoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/IEDM.2010.5703425

Ultra-low series resistance W/ErSi₂/n⁺-Si and W/Pd₂Si/p⁺-Si S/D electrodes for advanced CMOS platform

Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

A formation technology of ultra-low series resistance CMOS source/drain (S/D) electrodes is developed. The silicide/silicon contact resistivity (R _c) of 8.0×10^-10 Ω·cm² and the electrode's sheet resistance (R_sheet) of less than 5.0 Ω/□ are achieved for both n- and pMOS using W/ErSi₂ and W/Pd₂Si metal stacked silicide structures. For the first time, FD-SOI CMOS with the developed S/D electrodes was fabricated and the ring oscillator speed performance was evaluated.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	26.2.1-26.2.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703425
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

Access to Document

10.1109/IEDM.2010.5703425

Cite this

Kuroda, R., Tanaka, H., Nakao, Y., Teramoto, A., Miyamoto, N., Sugawa, S., & Ohmi, T. (2010). Ultra-low series resistance W/ErSi₂/n⁺-Si and W/Pd₂Si/p⁺-Si S/D electrodes for advanced CMOS platform. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 26.2.1-26.2.4). Article 5703425 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703425

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title = "Ultra-low series resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D electrodes for advanced CMOS platform",

abstract = "A formation technology of ultra-low series resistance CMOS source/drain (S/D) electrodes is developed. The silicide/silicon contact resistivity (R c) of 8.0×10-10 Ω·cm2 and the electrode's sheet resistance (Rsheet) of less than 5.0 Ω/□ are achieved for both n- and pMOS using W/ErSi2 and W/Pd2Si metal stacked silicide structures. For the first time, FD-SOI CMOS with the developed S/D electrodes was fabricated and the ring oscillator speed performance was evaluated.",

author = "Rihito Kuroda and Hiroaki Tanaka and Yukihisa Nakao and Akinobu Teramoto and Naoto Miyamoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2010",

doi = "10.1109/IEDM.2010.5703425",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "26.2.1--26.2.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Kuroda, R, Tanaka, H, Nakao, Y, Teramoto, A, Miyamoto, N, Sugawa, S & Ohmi, T 2010, Ultra-low series resistance W/ErSi₂/n⁺-Si and W/Pd₂Si/p⁺-Si S/D electrodes for advanced CMOS platform. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703425, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.2.1-26.2.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703425

Ultra-low series resistance W/ErSi₂/n⁺-Si and W/Pd₂Si/p⁺-Si S/D electrodes for advanced CMOS platform. / Kuroda, Rihito; Tanaka, Hiroaki; Nakao, Yukihisa et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 26.2.1-26.2.4 5703425 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Teramoto, Akinobu

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