Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

Y. Nakahara; K. Takeuchi; T. Tatsumi; Y. Ochiai; S. Manako; S. Samukawa; A. Furukawa

Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

Y. Nakahara, K. Takeuchi, T. Tatsumi, Y. Ochiai, S. Manako, S. Samukawa, A. Furukawa

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.

Original language	English
Pages (from-to)	174-175
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1996 Jun 11 → 1996 Jun 13

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS",

abstract = "A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.",

author = "Y. Nakahara and K. Takeuchi and T. Tatsumi and Y. Ochiai and S. Manako and S. Samukawa and A. Furukawa",

year = "1996",

month = jan,

day = "1",

language = "English",

pages = "174--175",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 Symposium on VLSI Technology ; Conference date: 11-06-1996 Through 13-06-1996",

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TY - JOUR

T1 - Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

AU - Nakahara, Y.

AU - Takeuchi, K.

AU - Tatsumi, T.

AU - Ochiai, Y.

AU - Manako, S.

AU - Samukawa, S.

AU - Furukawa, A.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.

AB - A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029719743&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029719743

SN - 0743-1562

SP - 174

EP - 175

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1996 Symposium on VLSI Technology

Y2 - 11 June 1996 through 13 June 1996

ER -

Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

Abstract

ASJC Scopus subject areas

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