Ultra shallow junction formation using excimer laser annealing for ultra small devices

E. S. Jung; J. C. Bea; Y. J. Lee

Ultra shallow junction formation using excimer laser annealing for ultra small devices

E. S. Jung, J. C. Bea, Y. J. Lee

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10∼20 nm for arsenic dosage(2×10¹⁴/cm²), excimer laser source(λ = 248 nm) is KrF, and sheet resistances are measured to 1 KΩ/□ at junction depth of 15 nm.

Original language	English
Pages	586-589
Number of pages	4
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of Duration: 2001 Jun 12 → 2001 Jun 16

Other

Other	2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001)
Country/Territory	Korea, Republic of
City	Pusan
Period	01/6/12 → 01/6/16

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Ultra shallow junction formation using excimer laser annealing for ultra small devices",

abstract = "In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10∼20 nm for arsenic dosage(2×1014/cm2), excimer laser source(λ = 248 nm) is KrF, and sheet resistances are measured to 1 KΩ/□ at junction depth of 15 nm.",

author = "Jung, {E. S.} and Bea, {J. C.} and Lee, {Y. J.}",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "586--589",

note = "2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) ; Conference date: 12-06-2001 Through 16-06-2001",

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TY - CONF

T1 - Ultra shallow junction formation using excimer laser annealing for ultra small devices

AU - Jung, E. S.

AU - Bea, J. C.

AU - Lee, Y. J.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10∼20 nm for arsenic dosage(2×1014/cm2), excimer laser source(λ = 248 nm) is KrF, and sheet resistances are measured to 1 KΩ/□ at junction depth of 15 nm.

AB - In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10∼20 nm for arsenic dosage(2×1014/cm2), excimer laser source(λ = 248 nm) is KrF, and sheet resistances are measured to 1 KΩ/□ at junction depth of 15 nm.

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M3 - Paper

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T2 - 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001)

Y2 - 12 June 2001 through 16 June 2001

ER -

Ultra shallow junction formation using excimer laser annealing for ultra small devices

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