TY - GEN
T1 - Ultracompact Silicon Wafer Packaging of Deep UV LED with Excellent Cooling Performance and Light Utilization Efficiency
AU - Chiba, Hirofumi
AU - Suzuki, Yukio
AU - Yasuda, Yoshiaki
AU - Kumagai, Mitsuyasu
AU - Koyama, Takaaki
AU - Tanaka, Shuji
N1 - Funding Information:
A major part of the manufacturing process was done using a common facility in Microsystem Integration Center, Tohoku University, which is partly supported by the Ministry of Education, Culture, Sports, Science and Technology’s Nanotechnology Platform Program.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/1
Y1 - 2020/1
N2 - This paper reports a deep-UV LED (DUV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A DUV-LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has merits in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. Uniform light emission at an optical output of 30 mW and effective reflection on Si (111) slopes in the Si-PKG were observed.
AB - This paper reports a deep-UV LED (DUV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A DUV-LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has merits in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. Uniform light emission at an optical output of 30 mW and effective reflection on Si (111) slopes in the Si-PKG were observed.
KW - Deep ultraviolet LED
KW - Hermetic sealing
KW - Through-silicon via (TSV)
KW - Wafer-level packaging
UR - http://www.scopus.com/inward/record.url?scp=85083157726&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85083157726&partnerID=8YFLogxK
U2 - 10.1109/MEMS46641.2020.9056370
DO - 10.1109/MEMS46641.2020.9056370
M3 - Conference contribution
AN - SCOPUS:85083157726
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 1310
EP - 1313
BT - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Y2 - 18 January 2020 through 22 January 2020
ER -