Ultrafast insulator-to-metal switching by photoinduced Mott transition

S. Iwai, Y. Okimoto, M. Ono, H. Matsuzaki, A. Maeda, H. Kishida, H. Okamoto, Y. Tokura

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrated the ultrafast photoinduced Mott transition from a charge transfer (CT) insulator to a metal in a halogen-bridged Ni chain compound by visible-mid IR pump-probe reflection spectroscopy. Upon the excitation of the CT band, the spectral weight of the gap transition is transferred to the inner-gap region. When the excitation density exceeds 0.1 per Ni site, the Drude-like high-reflection band appears in the infrared region, indicating the formation of a metallic state. The photogeneration of the metallic state and the subsequent recovery of the original insulating state occur within a few picoseconds.

Original languageEnglish
Title of host publicationInternational Conference on Ultrafast Phenomena, UP 2004
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781557528209
Publication statusPublished - 2004
EventInternational Conference on Ultrafast Phenomena, UP 2004 - Niigata, Japan
Duration: 2004 Jul 252004 Jul 30

Publication series

NameOptics InfoBase Conference Papers


ConferenceInternational Conference on Ultrafast Phenomena, UP 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials


Dive into the research topics of 'Ultrafast insulator-to-metal switching by photoinduced Mott transition'. Together they form a unique fingerprint.

Cite this