Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications

K. Hosomi; H. Yamada; T. Kikawa; S. Goto; T. Katsuyama; Y. Arakawa

doi:10.1109/GROUP4.2005.1516431

Ultrahigh-aspect-ratio Si and SiO₂ deeply-etched periodic structures with extremely smooth surfaces for photonics applications

K. Hosomi, H. Yamada, T. Kikawa, S. Goto, T. Katsuyama, Y. Arakawa

ENG - Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

One-dimensional deeply-etched periodic Si and SiO₂ structures were fabricated and had excellent vertical profiles (<0.5 deg.), ultrahigh aspect ratios (∼80) and large etch depths (∼20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.

Original language	English
Title of host publication	2005 IEEE International Conference on Group IV Photonics
Pages	140-142
Number of pages	3
DOIs	https://doi.org/10.1109/GROUP4.2005.1516431
Publication status	Published - 2005
Event	2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium Duration: 2005 Sept 21 → 2005 Sept 23

Publication series

Name	2005 IEEE International Conference on Group IV Photonics
Volume	2005

Conference

Conference	2005 IEEE International Conference on Group IV Photonics
Country/Territory	Belgium
City	Antwerp
Period	05/9/21 → 05/9/23

Access to Document

10.1109/GROUP4.2005.1516431

Cite this

Hosomi, K., Yamada, H., Kikawa, T., Goto, S., Katsuyama, T., & Arakawa, Y. (2005). Ultrahigh-aspect-ratio Si and SiO₂ deeply-etched periodic structures with extremely smooth surfaces for photonics applications. In 2005 IEEE International Conference on Group IV Photonics (pp. 140-142). Article 1516431 (2005 IEEE International Conference on Group IV Photonics; Vol. 2005). https://doi.org/10.1109/GROUP4.2005.1516431

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title = "Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications",

abstract = "One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (<0.5 deg.), ultrahigh aspect ratios (∼80) and large etch depths (∼20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.",

author = "K. Hosomi and H. Yamada and T. Kikawa and S. Goto and T. Katsuyama and Y. Arakawa",

year = "2005",

doi = "10.1109/GROUP4.2005.1516431",

language = "English",

isbn = "0780390709",

series = "2005 IEEE International Conference on Group IV Photonics",

pages = "140--142",

booktitle = "2005 IEEE International Conference on Group IV Photonics",

note = "2005 IEEE International Conference on Group IV Photonics ; Conference date: 21-09-2005 Through 23-09-2005",

}

Hosomi, K, Yamada, H, Kikawa, T, Goto, S, Katsuyama, T & Arakawa, Y 2005, Ultrahigh-aspect-ratio Si and SiO₂ deeply-etched periodic structures with extremely smooth surfaces for photonics applications. in 2005 IEEE International Conference on Group IV Photonics., 1516431, 2005 IEEE International Conference on Group IV Photonics, vol. 2005, pp. 140-142, 2005 IEEE International Conference on Group IV Photonics, Antwerp, Belgium, 05/9/21. https://doi.org/10.1109/GROUP4.2005.1516431

Ultrahigh-aspect-ratio Si and SiO₂ deeply-etched periodic structures with extremely smooth surfaces for photonics applications. / Hosomi, K.; Yamada, H.; Kikawa, T. et al.
2005 IEEE International Conference on Group IV Photonics. 2005. p. 140-142 1516431 (2005 IEEE International Conference on Group IV Photonics; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications

AU - Hosomi, K.

AU - Yamada, H.

AU - Kikawa, T.

AU - Goto, S.

AU - Katsuyama, T.

AU - Arakawa, Y.

PY - 2005

Y1 - 2005

N2 - One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (<0.5 deg.), ultrahigh aspect ratios (∼80) and large etch depths (∼20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.

AB - One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (<0.5 deg.), ultrahigh aspect ratios (∼80) and large etch depths (∼20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.

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Hosomi K, Yamada H, Kikawa T, Goto S, Katsuyama T, Arakawa Y. Ultrahigh-aspect-ratio Si and SiO₂ deeply-etched periodic structures with extremely smooth surfaces for photonics applications. In 2005 IEEE International Conference on Group IV Photonics. 2005. p. 140-142. 1516431. (2005 IEEE International Conference on Group IV Photonics). doi: 10.1109/GROUP4.2005.1516431