Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source

Hiroyuki Miyazoe; Masaki Sai; Sven Stauss; Kazuo Terashima

doi:10.1116/1.3010716

Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source

Hiroyuki Miyazoe, Masaki Sai, Sven Stauss, Kazuo Terashima

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

An ultrahigh-frequency (450 MHz) microplasma jet was stably generated at a chamber pressure as low as 10-3 Pa. Electron and gas temperatures of this microplasma as estimated by optical-emission spectroscopy measurements were ∼7000 and 1000 K, respectively. The atomic oxygen flux at the torch exit was revealed to be of the order of 1019 atoms/ cm2 s, which is 102 - 104 times higher than that obtained by other conventional plasma sources. This microplasma jet was also applied as an ion source for in situ neutralization of electron charging-up effects in a scanning-electron microscopy observation of insulating materials.

Original language	English
Pages (from-to)	9-12
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3010716
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.3010716

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title = "Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source",

abstract = "An ultrahigh-frequency (450 MHz) microplasma jet was stably generated at a chamber pressure as low as 10-3 Pa. Electron and gas temperatures of this microplasma as estimated by optical-emission spectroscopy measurements were ∼7000 and 1000 K, respectively. The atomic oxygen flux at the torch exit was revealed to be of the order of 1019 atoms/ cm2 s, which is 102 - 104 times higher than that obtained by other conventional plasma sources. This microplasma jet was also applied as an ion source for in situ neutralization of electron charging-up effects in a scanning-electron microscopy observation of insulating materials.",

author = "Hiroyuki Miyazoe and Masaki Sai and Sven Stauss and Kazuo Terashima",

note = "Funding Information: This work was supported financially in part by Grants-in-Aid for Scientific Research (B) (Grant No. 17360349) and Specific Research of Priority Areas (Microplasma, Grant No. 15075202) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan as well as by the Japanese Society for the Promotion of Science (JSPS) (Grant No. P05101). The authors would like to thank T. Osafune, S. Konno, and H. Nishiyama for their technical support in the development of the new SEM system.",

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doi = "10.1116/1.3010716",

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T1 - Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source

AU - Miyazoe, Hiroyuki

AU - Sai, Masaki

AU - Stauss, Sven

AU - Terashima, Kazuo

N1 - Funding Information: This work was supported financially in part by Grants-in-Aid for Scientific Research (B) (Grant No. 17360349) and Specific Research of Priority Areas (Microplasma, Grant No. 15075202) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan as well as by the Japanese Society for the Promotion of Science (JSPS) (Grant No. P05101). The authors would like to thank T. Osafune, S. Konno, and H. Nishiyama for their technical support in the development of the new SEM system.

PY - 2009

Y1 - 2009

N2 - An ultrahigh-frequency (450 MHz) microplasma jet was stably generated at a chamber pressure as low as 10-3 Pa. Electron and gas temperatures of this microplasma as estimated by optical-emission spectroscopy measurements were ∼7000 and 1000 K, respectively. The atomic oxygen flux at the torch exit was revealed to be of the order of 1019 atoms/ cm2 s, which is 102 - 104 times higher than that obtained by other conventional plasma sources. This microplasma jet was also applied as an ion source for in situ neutralization of electron charging-up effects in a scanning-electron microscopy observation of insulating materials.

AB - An ultrahigh-frequency (450 MHz) microplasma jet was stably generated at a chamber pressure as low as 10-3 Pa. Electron and gas temperatures of this microplasma as estimated by optical-emission spectroscopy measurements were ∼7000 and 1000 K, respectively. The atomic oxygen flux at the torch exit was revealed to be of the order of 1019 atoms/ cm2 s, which is 102 - 104 times higher than that obtained by other conventional plasma sources. This microplasma jet was also applied as an ion source for in situ neutralization of electron charging-up effects in a scanning-electron microscopy observation of insulating materials.

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Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source

Abstract

ASJC Scopus subject areas

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