@article{837607d50cad47d18c022eec13aa17f6,
title = "Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics",
abstract = "We report on room- Temperature plasmonic detection of sub- Terahertz radiation by InAlAs/InGaAs/ InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain- To-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz°5 at 200GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.",
author = "Y. Kurita and G. Ducoumau and D. Coquillat and A. Satou and K. Kobayashi and Tombet, {S. Boubanga} and Meziani, {Y. M.} and Popov, {V. V.} and W. Knap and T. Suemitsu and T. Otsuji",
note = "Funding Information: The authors thank T. Kawasaki from Research Institute of Electrical Communication. Tohoku University, for his helpful comments about the NEP estimation. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrications. This work has been supported in part by the JST/ANR {"}WITH,{"} a Japan-France strategic collaborative research project. The experiment was conducted in IEMN, Univ. Lille 1, Lille, France and LC2-Labs., Univ. Montpellier 2, Montpellier, France. Y.M.M. acknowledges the financial support from the MINECO through the Project No. TEC2012-32777. V.V.P. acknowledges the support the Russian Foundation for Basic Research through Grant Nos. 12-02-00813 and 14-02-92102. Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",
year = "2014",
month = jun,
day = "23",
doi = "10.1063/1.4885499",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "25",
}