Ultrahigh-speed IC technologies using InP-based HEMTs for future optical communication systems

Yohtaro Umeda, Takatomo Enoki, Taiichi Otsuji, Tetsuya Suemitsu, Haruki Yokoyama, Yasunobu Ishii

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


This paper presents the technologies for ovcr40-Gbit/s operation of InP-bascd HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BOB) film as an inter-layer insulator decreases interconnection delay and results in highspeed operation of digital circuits. A static frequency divider and a 2:1 multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahighspeed digital/analog ICs fabricated using the HEMTs were used in 40 Gbit/s optical transmission experiment and showed good bit-crror-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InPbased HEMTs and is found to be promising for future ultrashortgate devices.

Original languageEnglish
Pages (from-to)409-417
Number of pages9
JournalIEICE Transactions on Electronics
Issue number3
Publication statusPublished - 1999


  • Delay
  • HEMT
  • IC
  • Inp
  • Optical communication


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