Ultrahigh-speed integrated circuits using InP-based HEMTs

Takatomo Enoki; Haruki Yokoyama; Yohtaro Umeda; Taiichi Otsuji

doi:10.1143/jjap.37.1359

Ultrahigh-speed integrated circuits using InP-based HEMTs

Takatomo Enoki, Haruki Yokoyama, Yohtaro Umeda, Taiichi Otsuji

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

The device technologies for 0.1-μm-gate InP-based high electron mobility transistors (HEMTs), which consist of an In-AlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (f_T) of over 180GHz and a transconductance (g_m) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.

Original language	English
Pages (from-to)	1359-1364
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1359
Publication status	Published - 1998 Mar
Externally published	Yes

Keywords

Gate delay
Gate recess
HEMT
InAIAs
InGaAs
InP
Level shifter
Optical communication systems

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.1359

Cite this

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title = "Ultrahigh-speed integrated circuits using InP-based HEMTs",

abstract = "The device technologies for 0.1-μm-gate InP-based high electron mobility transistors (HEMTs), which consist of an In-AlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (fT) of over 180GHz and a transconductance (gm) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.",

keywords = "Gate delay, Gate recess, HEMT, InAIAs, InGaAs, InP, Level shifter, Optical communication systems",

author = "Takatomo Enoki and Haruki Yokoyama and Yohtaro Umeda and Taiichi Otsuji",

year = "1998",

month = mar,

doi = "10.1143/jjap.37.1359",

language = "English",

volume = "37",

pages = "1359--1364",

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AU - Enoki, Takatomo

AU - Yokoyama, Haruki

AU - Umeda, Yohtaro

AU - Otsuji, Taiichi

PY - 1998/3

Y1 - 1998/3

N2 - The device technologies for 0.1-μm-gate InP-based high electron mobility transistors (HEMTs), which consist of an In-AlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (fT) of over 180GHz and a transconductance (gm) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.

AB - The device technologies for 0.1-μm-gate InP-based high electron mobility transistors (HEMTs), which consist of an In-AlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (fT) of over 180GHz and a transconductance (gm) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.

KW - Gate delay

KW - Gate recess

KW - HEMT

KW - InAIAs

KW - InGaAs

KW - InP

KW - Level shifter

KW - Optical communication systems

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Ultrahigh-speed integrated circuits using InP-based HEMTs

Abstract

Keywords

ASJC Scopus subject areas

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