Ultrahigh-speed integrated circuits using InP-based HEMTs

Takatomo Enoki, Haruki Yokoyama, Yohtaro Umeda, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)


The device technologies for 0.1-μm-gate InP-based high electron mobility transistors (HEMTs), which consist of an In-AlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (fT) of over 180GHz and a transconductance (gm) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.

Original languageEnglish
Pages (from-to)1359-1364
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar
Externally publishedYes


  • Gate delay
  • Gate recess
  • HEMT
  • InAIAs
  • InGaAs
  • InP
  • Level shifter
  • Optical communication systems

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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