TY - GEN
T1 - Ultrasensitive Si nanowire probe for magnetic resonance detection
AU - Seo, Yong Jun
AU - Toda, Masaya
AU - Kawai, Yusuke
AU - Ono, Takahito
PY - 2014
Y1 - 2014
N2 - In this study, we have fabricated a 210 nm-wide and 32 μm-long Si nanowire probe with a Si mirror from a silicon-on-insulator wafer. Additionally, a Nd-Fe-B magnet is mounteded at the end of the nanowire for magnetic force detection in MRFM measurements. The fabricated probe shows a resonance frequency f0 of 11.256 kHz and a Q factor of 12000 after annealing at 800 oC for 2 hours in forming gas. The probe exhibits atto-newton sensitivity, and the measurement of force mapping based on electron spin resonance is demonstrated for three-dimensional imaging of radical density. The detected force is approximately 8.5 aN at room temperature.
AB - In this study, we have fabricated a 210 nm-wide and 32 μm-long Si nanowire probe with a Si mirror from a silicon-on-insulator wafer. Additionally, a Nd-Fe-B magnet is mounteded at the end of the nanowire for magnetic force detection in MRFM measurements. The fabricated probe shows a resonance frequency f0 of 11.256 kHz and a Q factor of 12000 after annealing at 800 oC for 2 hours in forming gas. The probe exhibits atto-newton sensitivity, and the measurement of force mapping based on electron spin resonance is demonstrated for three-dimensional imaging of radical density. The detected force is approximately 8.5 aN at room temperature.
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U2 - 10.1109/MEMSYS.2014.6765596
DO - 10.1109/MEMSYS.2014.6765596
M3 - Conference contribution
AN - SCOPUS:84898956034
SN - 9781479935086
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 151
EP - 154
BT - MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
Y2 - 26 January 2014 through 30 January 2014
ER -