Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

Manabu Ishimaru, Yuusuke Tanaka, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno

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5 Citations (Scopus)


We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

Original languageEnglish
Article number153103
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2009


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