Ultrasonic study of vacancy in single crystal silicon at low temperatures

M. Akatsu, T. Goto, H. Y-Kaneta, H. Watanabe, Y. Nemoto, K. Mitsumoto, S. Baba, Y. Nagai, S. Nakamura

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We have performed ultrasonic measurements at low temperatures in order to investigate vacancy in single crystal silicon. The longitudinal elastic constants of non-doped and boron-doped silicon grown by a floating zone method exhibit appreciable softening with decreasing temperature down to 20 mK. The softening of boron-doped silicon is easily suppressed in applied magnetic field up to 2 T, while the softening of non-doped silicon is robust in fields even up to 16 T. The softening of elastic constants in high-purity crystalline silicon is certainly caused by the coupling of elastic strains of the ultrasonic waves to electric quadrupoles of the vacancy orbital.

Original languageEnglish
Article number042002
JournalJournal of Physics: Conference Series
Issue number4
Publication statusPublished - 2009


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