Ultrathin polymer Langmuir-Blodgett films for microlithography

Tiesheng Li; Masaya Mitsuishi; Tokuji Miyashita

doi:10.1016/S0040-6090(03)01199-4

Ultrathin polymer Langmuir-Blodgett films for microlithography

Tiesheng Li, Masaya Mitsuishi, Tokuji Miyashita

ENG - Applied Chemistry

Tohoku University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We describe photolithographic properties of poly(N-dodecylmethacrylamide-co-t-butyl 4-vinylphenyl carbonate) [p(DDMA-tBVPC)], which has a structure being subject to main chain scission and deprotection of t-butoxycarbonyloxy group by deep UV irradiation. Positive-tone patterns of the p(DDMA-tBVPC) Langmuir-Blodgett (LB) film with 60 layers were obtained by deep UV light irradiation followed by development with alkaline aqueous solution. The resolution of the pattern was 0.75 μm, which is the resolution limit of the photomask employed. The etching resistance of p(DDMA-tBVPC) LB film deposited for the pattern of the gold film is also investigated.

Original language	English
Pages (from-to)	138-142
Number of pages	5
Journal	Thin Solid Films
Volume	446
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(03)01199-4
Publication status	Published - 2004 Jan 1

Keywords

Etching
Langmuir-Blodgett films
Photolithography
Polymer

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10.1016/S0040-6090(03)01199-4

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title = "Ultrathin polymer Langmuir-Blodgett films for microlithography",

abstract = "We describe photolithographic properties of poly(N-dodecylmethacrylamide-co-t-butyl 4-vinylphenyl carbonate) [p(DDMA-tBVPC)], which has a structure being subject to main chain scission and deprotection of t-butoxycarbonyloxy group by deep UV irradiation. Positive-tone patterns of the p(DDMA-tBVPC) Langmuir-Blodgett (LB) film with 60 layers were obtained by deep UV light irradiation followed by development with alkaline aqueous solution. The resolution of the pattern was 0.75 μm, which is the resolution limit of the photomask employed. The etching resistance of p(DDMA-tBVPC) LB film deposited for the pattern of the gold film is also investigated.",

keywords = "Etching, Langmuir-Blodgett films, Photolithography, Polymer",

author = "Tiesheng Li and Masaya Mitsuishi and Tokuji Miyashita",

note = "Funding Information: We would like to thank Prof. T. Miyazaki and Dr Y. Ando, Department of Applied Physics, Graduate School of Engineering, Tohoku University, for the use of surface profilometry. This work was partially supported by a Grant-in-Aid for Scientific Research (No. 14205130) from the Japanese Ministry of Education, Culture, Sports, Science and Technology and Kawasaki Steel 21st Century Foundation.",

year = "2004",

month = jan,

day = "1",

doi = "10.1016/S0040-6090(03)01199-4",

language = "English",

volume = "446",

pages = "138--142",

journal = "Thin Solid Films",

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T1 - Ultrathin polymer Langmuir-Blodgett films for microlithography

AU - Li, Tiesheng

AU - Mitsuishi, Masaya

AU - Miyashita, Tokuji

N1 - Funding Information: We would like to thank Prof. T. Miyazaki and Dr Y. Ando, Department of Applied Physics, Graduate School of Engineering, Tohoku University, for the use of surface profilometry. This work was partially supported by a Grant-in-Aid for Scientific Research (No. 14205130) from the Japanese Ministry of Education, Culture, Sports, Science and Technology and Kawasaki Steel 21st Century Foundation.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We describe photolithographic properties of poly(N-dodecylmethacrylamide-co-t-butyl 4-vinylphenyl carbonate) [p(DDMA-tBVPC)], which has a structure being subject to main chain scission and deprotection of t-butoxycarbonyloxy group by deep UV irradiation. Positive-tone patterns of the p(DDMA-tBVPC) Langmuir-Blodgett (LB) film with 60 layers were obtained by deep UV light irradiation followed by development with alkaline aqueous solution. The resolution of the pattern was 0.75 μm, which is the resolution limit of the photomask employed. The etching resistance of p(DDMA-tBVPC) LB film deposited for the pattern of the gold film is also investigated.

AB - We describe photolithographic properties of poly(N-dodecylmethacrylamide-co-t-butyl 4-vinylphenyl carbonate) [p(DDMA-tBVPC)], which has a structure being subject to main chain scission and deprotection of t-butoxycarbonyloxy group by deep UV irradiation. Positive-tone patterns of the p(DDMA-tBVPC) Langmuir-Blodgett (LB) film with 60 layers were obtained by deep UV light irradiation followed by development with alkaline aqueous solution. The resolution of the pattern was 0.75 μm, which is the resolution limit of the photomask employed. The etching resistance of p(DDMA-tBVPC) LB film deposited for the pattern of the gold film is also investigated.

KW - Etching

KW - Langmuir-Blodgett films

KW - Photolithography

KW - Polymer

UR - http://www.scopus.com/inward/record.url?scp=0347412027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347412027&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(03)01199-4

DO - 10.1016/S0040-6090(03)01199-4

M3 - Article

AN - SCOPUS:0347412027

SN - 0040-6090

VL - 446

SP - 138

EP - 142

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Ultrathin polymer Langmuir-Blodgett films for microlithography

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Keywords

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