TY - JOUR
T1 - Ultraviolet laser photoemission spectroscopy of FeSi
T2 - Observation of a gap opening in density of states
AU - Ishizaka, K.
AU - Kiss, T.
AU - Shimojima, T.
AU - Yokoya, T.
AU - Togashi, T.
AU - Watanabe, S.
AU - Zhang, C. Q.
AU - Chen, C. T.
AU - Onose, Y.
AU - Tokura, Y.
AU - Shin, S.
PY - 2005/12/15
Y1 - 2005/12/15
N2 - The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (∼60meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.
AB - The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (∼60meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.
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U2 - 10.1103/PhysRevB.72.233202
DO - 10.1103/PhysRevB.72.233202
M3 - Article
AN - SCOPUS:29744440864
SN - 1098-0121
VL - 72
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 23
M1 - 233202
ER -