Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition

Shigefusa Chichibu; Hisayuki Nakanishi; Sho Shirakata

doi:10.1063/1.113781

Ultraviolet photoluminescence from CuAlS₂ heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition

Shigefusa Chichibu, Hisayuki Nakanishi, Sho Shirakata

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Photoluminescence (PL) studies were carried out on CuAlS₂ heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain.

Original language	English
Pages (from-to)	3513
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113781
Publication status	Published - 1995

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title = "Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition",

abstract = "Photoluminescence (PL) studies were carried out on CuAlS2 heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain.",

author = "Shigefusa Chichibu and Hisayuki Nakanishi and Sho Shirakata",

year = "1995",

doi = "10.1063/1.113781",

language = "English",

pages = "3513",

journal = "Applied Physics Letters",

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T1 - Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition

AU - Chichibu, Shigefusa

AU - Nakanishi, Hisayuki

AU - Shirakata, Sho

PY - 1995

Y1 - 1995

N2 - Photoluminescence (PL) studies were carried out on CuAlS2 heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain.

AB - Photoluminescence (PL) studies were carried out on CuAlS2 heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain.

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Ultraviolet photoluminescence from CuAlS₂ heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition

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