Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures

M. Suemitsu; S. N. Filimonov

doi:10.1533/9780857091420.2.45

Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures

M. Suemitsu, S. N. Filimonov

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Chapter

4 Citations (Scopus)

Abstract

This chapter recalls some basic concepts required for understanding crystal growth. Thermodynamics and kinetics of the crystallization process are considered and an atomistic picture of the fundamental surface processes is given. Basic mechanisms of kinetic growth instabilities in epitaxial growth are described. Finally, an overview of the strain relaxation mechanism in heteroepitaxial growth is given using the Ge/Si(111) and Ge/Si(001) systems as an example.

Original language	English
Title of host publication	Silicon-Germanium (SiGe) Nanostructures
Publisher	Elsevier Ltd
Pages	45-71
Number of pages	27
ISBN (Print)	9781845696894
DOIs	https://doi.org/10.1533/9780857091420.2.45
Publication status	Published - 2011 Feb

Keywords

Island nucleation
Kinetic growth instabilities
Strain relaxation in heteroepitaxial growth
Supersaturation
Surface diffusion

ASJC Scopus subject areas

Materials Science(all)

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10.1533/9780857091420.2.45

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abstract = "This chapter recalls some basic concepts required for understanding crystal growth. Thermodynamics and kinetics of the crystallization process are considered and an atomistic picture of the fundamental surface processes is given. Basic mechanisms of kinetic growth instabilities in epitaxial growth are described. Finally, an overview of the strain relaxation mechanism in heteroepitaxial growth is given using the Ge/Si(111) and Ge/Si(001) systems as an example.",

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AU - Filimonov, S. N.

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AB - This chapter recalls some basic concepts required for understanding crystal growth. Thermodynamics and kinetics of the crystallization process are considered and an atomistic picture of the fundamental surface processes is given. Basic mechanisms of kinetic growth instabilities in epitaxial growth are described. Finally, an overview of the strain relaxation mechanism in heteroepitaxial growth is given using the Ge/Si(111) and Ge/Si(001) systems as an example.

KW - Island nucleation

KW - Kinetic growth instabilities

KW - Strain relaxation in heteroepitaxial growth

KW - Supersaturation

KW - Surface diffusion

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M3 - Chapter

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EP - 71

BT - Silicon-Germanium (SiGe) Nanostructures

PB - Elsevier Ltd

ER -

Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures

Abstract

Keywords

ASJC Scopus subject areas

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