Understanding of BTI for tunnel FETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. Ishikawa, Y. Morita, S. Migita, H. Ota, Y. X. Liu, S. O'Uchi, J. Tsukada, H. Yamauchi, T. Matsukawa, M. Masahara, K. Endo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)


We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n+ source/gate edge. Furthermore, in terms of the BTI degradation of n-and p-type TFETs, although the injection sources of carriers inducing PBTI and NBTI are different, applying a drain bias corresponding to the operation conditions has an effect on the BTI lifetime improvement of n-and p-type TFETs.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467398930
Publication statusPublished - 2015 Feb 16
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 2015 Dec 72015 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Conference61st IEEE International Electron Devices Meeting, IEDM 2015
Country/TerritoryUnited States


Dive into the research topics of 'Understanding of BTI for tunnel FETs'. Together they form a unique fingerprint.

Cite this