Abstract
Due to its electronic conductivity and transparency, Indium Tin Oxide (ITO) is an irreplaceable material for today's technol- ogy, such as various flat panel displays. The resultant increase of the demand for indium is a major concern, but can be solved by understanding the detail of electronic conduction in ITO. For this purpose, we are working on a computational physics research on ITO: a model analysis of thin film with reduced amount of indium as a percolation model. Because ITO is typically formed into thin film electrodes in its applications, we are currently focused on 2D percolation models.
Original language | English |
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Pages (from-to) | 171-173 |
Number of pages | 3 |
Journal | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
Volume | 73 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 Mar |
Externally published | Yes |
Keywords
- First principles calculation
- Indium
- Percolation
- Rare metal
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry