Unidirectional formation of tetrahedral voids in irradiated silicon carbide

S. Kondo, Y. Katoh, L. L. Snead

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27 Citations (Scopus)


The {111} tetrahedral voids induced by neutron irradiation in 3C-SiC were found to be spatially oriented in only one of two possible directions. The tetrahedral shape was unexpected as the surface-to-volume ratio is larger than the alternative {111} octahedral void common in both metals and ceramics. From a geometric viewpoint, all faces of the observed voids are either Si- or C-terminated surfaces. By comparing the surface area with the octahedral void (composed of the both Si- and C-surfaces) of the same volume, the considerable difference in surface energy between the Si(111) and C (1- 1- 1-) was implicated.

Original languageEnglish
Article number163110
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2008


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