Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography

Yuichiro Tanushi; Tomohiro Kita; Munehiro Toyama; Miyoshi Seki; Keiji Koshino; Nobuyuki Yokoyama; Minoru Ohtsuka; Akinobu Sugiyama; Eiichi Ishitsuka; Tsukuru Sano; Tsuyoshi Horikawa; Hirohito Yamada

doi:10.1109/Group4.2013.6644448

Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography

Yuichiro Tanushi, Tomohiro Kita, Munehiro Toyama, Miyoshi Seki, Keiji Koshino, Nobuyuki Yokoyama, Minoru Ohtsuka, Akinobu Sugiyama, Eiichi Ishitsuka, Tsukuru Sano, Tsuyoshi Horikawa, Hirohito Yamada

ENG - Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.

Original language	English
Title of host publication	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Pages	105-106
Number of pages	2
DOIs	https://doi.org/10.1109/Group4.2013.6644448
Publication status	Published - 2013
Event	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 - Seoul, Korea, Republic of Duration: 2013 Aug 28 → 2013 Aug 30

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Conference

Conference	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Country/Territory	Korea, Republic of
City	Seoul
Period	13/8/28 → 13/8/30

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10.1109/Group4.2013.6644448

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Tanushi, Y., Kita, T., Toyama, M., Seki, M., Koshino, K., Yokoyama, N., Ohtsuka, M., Sugiyama, A., Ishitsuka, E., Sano, T., Horikawa, T., & Yamada, H. (2013). Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. In 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 (pp. 105-106). Article 6644448 (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/Group4.2013.6644448

@inproceedings{606805203ae74ebdb8c9684e63f20053,

title = "Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography",

abstract = "We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.",

author = "Yuichiro Tanushi and Tomohiro Kita and Munehiro Toyama and Miyoshi Seki and Keiji Koshino and Nobuyuki Yokoyama and Minoru Ohtsuka and Akinobu Sugiyama and Eiichi Ishitsuka and Tsukuru Sano and Tsuyoshi Horikawa and Hirohito Yamada",

year = "2013",

doi = "10.1109/Group4.2013.6644448",

language = "English",

isbn = "9781467358040",

series = "IEEE International Conference on Group IV Photonics GFP",

pages = "105--106",

booktitle = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013",

note = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 ; Conference date: 28-08-2013 Through 30-08-2013",

}

Tanushi, Y, Kita, T, Toyama, M, Seki, M, Koshino, K, Yokoyama, N, Ohtsuka, M, Sugiyama, A, Ishitsuka, E, Sano, T, Horikawa, T & Yamada, H 2013, Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. in 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013., 6644448, IEEE International Conference on Group IV Photonics GFP, pp. 105-106, 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, Seoul, Korea, Republic of, 13/8/28. https://doi.org/10.1109/Group4.2013.6644448

Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. / Tanushi, Yuichiro; Kita, Tomohiro; Toyama, Munehiro et al.
2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 105-106 6644448 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography

AU - Tanushi, Yuichiro

AU - Kita, Tomohiro

AU - Toyama, Munehiro

AU - Seki, Miyoshi

AU - Koshino, Keiji

AU - Yokoyama, Nobuyuki

AU - Ohtsuka, Minoru

AU - Sugiyama, Akinobu

AU - Ishitsuka, Eiichi

AU - Sano, Tsukuru

AU - Horikawa, Tsuyoshi

AU - Yamada, Hirohito

PY - 2013

Y1 - 2013

N2 - We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.

AB - We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.

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U2 - 10.1109/Group4.2013.6644448

DO - 10.1109/Group4.2013.6644448

M3 - Conference contribution

AN - SCOPUS:84891053020

SN - 9781467358040

T3 - IEEE International Conference on Group IV Photonics GFP

SP - 105

EP - 106

BT - 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013

T2 - 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013

Y2 - 28 August 2013 through 30 August 2013

ER -

Tanushi Y, Kita T, Toyama M, Seki M, Koshino K, Yokoyama N et al. Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography. In 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 105-106. 6644448. (IEEE International Conference on Group IV Photonics GFP). doi: 10.1109/Group4.2013.6644448

Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography

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