TY - JOUR
T1 - Uniformity improvement of optical and electrical characteristics in integrated vertical-to-surface transmission electro-photonic device with a vertical cavity
AU - Kurihara, Kaori
AU - Numai, Takahiro
AU - Yoshikawa, Takashi
AU - Kosaka, Hideo
AU - Sugimoto, Mitsunori
AU - Sugimoto, Yoshimasa
AU - Kasahara, Kenichi
PY - 1994/3
Y1 - 1994/3
N2 - We report an improvement in uniformity of both electrical and optical characteristics in an integrated vertical-to-surface transmission electro-photonic device with a vertical cavity. This improvement is due to both highly controlled reactive ion-beam etching and a self-alignment process. Reactive ion-beam etching highly controls etching depth, and leads to uniform electrical and optical characteristics. Self-alignment process makes it possible to fabricate a fine pattern with high accuracy. By using these fabrication processes, the deviations of both the electrical resistance and the optical light-output characteristics are reduced to less than half of those for the wet-etched devices. Furthermore, the remaining deviation in the light-output characteristics is reduced by suppressing light reflection on the surface. As a result, the standard deviation of the threshold current under the CW condition is 0.39 mA. This value is about half of that for the wet-etched devices.
AB - We report an improvement in uniformity of both electrical and optical characteristics in an integrated vertical-to-surface transmission electro-photonic device with a vertical cavity. This improvement is due to both highly controlled reactive ion-beam etching and a self-alignment process. Reactive ion-beam etching highly controls etching depth, and leads to uniform electrical and optical characteristics. Self-alignment process makes it possible to fabricate a fine pattern with high accuracy. By using these fabrication processes, the deviations of both the electrical resistance and the optical light-output characteristics are reduced to less than half of those for the wet-etched devices. Furthermore, the remaining deviation in the light-output characteristics is reduced by suppressing light reflection on the surface. As a result, the standard deviation of the threshold current under the CW condition is 0.39 mA. This value is about half of that for the wet-etched devices.
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U2 - 10.1143/JJAP.33.1352
DO - 10.1143/JJAP.33.1352
M3 - Article
AN - SCOPUS:0028404363
SN - 0021-4922
VL - 33
SP - 1352
EP - 1356
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3R
ER -