Unintentional doping effects on atomically-thin Nb-doped M0S2 observed by scanning nonlinear dielectric microscopy

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2 Citations (Scopus)

Abstract

Two-dimensional semiconductors such as atomically-thin M0S2 have recently gained much attention because of their superior material properties fascinating for the future electronic device applications. Here we investigate the nanoscale dominant carrier distribution on atomically-thin natural and Nb- doped M0S2 mechanically exfoliated on SiCVSi substrates by using scanning nonlinear dielectric microscopy. We show that a few-layer natural M0S2 sample is an 11-type semiconductor, as expected, but Nb-doped MoSj, normally considered as a p-type semiconductor, can unexpectedly become an n-typc semiconductor due to strong unintentional electron doping.

Original languageEnglish
Title of host publicationISTFA 2019 - Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis
PublisherASM International
Pages498-503
Number of pages6
ISBN (Electronic)9781627082730
Publication statusPublished - 2019
Event45th International Symposium for Testing and Failure Analysis, ISTFA 2019 - Portland, United States
Duration: 2019 Nov 102019 Nov 14

Publication series

NameConference Proceedings from the International Symposium for Testing and Failure Analysis

Conference

Conference45th International Symposium for Testing and Failure Analysis, ISTFA 2019
Country/TerritoryUnited States
CityPortland
Period19/11/1019/11/14

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