Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone; Alpana Nayak; Ryoji Kosugi; Yasunori Tanaka; Shinsuke Harada; Yuji Kiuchi; Hajime Okumura; Yasuo Cho

doi:10.4028/www.scientific.net/MSF.897.159

Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, Yasuo Cho

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO₂/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO₂/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C-V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2016
Editors	Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
Publisher	Trans Tech Publications Ltd
Pages	159-162
Number of pages	4
ISBN (Print)	9783035710434
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.159
Publication status	Published - 2017
Event	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece Duration: 2016 Sept 25 → 2016 Sept 29

Publication series

Name	Materials Science Forum
Volume	897 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
Country/Territory	Greece
City	Halkidiki
Period	16/9/25 → 16/9/29

Keywords

Scanning nonlinear dielectric microscopy
SiO/SiC interface

Access to Document

10.4028/www.scientific.net/MSF.897.159

Cite this

Chinone, N., Nayak, A., Kosugi, R., Tanaka, Y., Harada, S., Kiuchi, Y., Okumura, H., & Cho, Y. (2017). Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy. In K. Zekentes, K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Silicon Carbide and Related Materials 2016 (pp. 159-162). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.159

Chinone, Norimichi ; Nayak, Alpana ; Kosugi, Ryoji et al. / Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy. Silicon Carbide and Related Materials 2016. editor / Konstantinos Zekentes ; Konstantinos Zekentes ; Konstantin V. Vasilevskiy ; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. pp. 159-162 (Materials Science Forum).

@inproceedings{db4a5d96345a4c209d11fb231cce5268,

title = "Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy",

abstract = "Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO2/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO2/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C-V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.",

keywords = "Scanning nonlinear dielectric microscopy, SiO/SiC interface",

author = "Norimichi Chinone and Alpana Nayak and Ryoji Kosugi and Yasunori Tanaka and Shinsuke Harada and Yuji Kiuchi and Hajime Okumura and Yasuo Cho",

note = "Publisher Copyright: {\textcopyright} 2017 Trans Tech Publications, Switzerland.; 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 ; Conference date: 25-09-2016 Through 29-09-2016",

year = "2017",

doi = "10.4028/www.scientific.net/MSF.897.159",

language = "English",

isbn = "9783035710434",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "159--162",

editor = "Konstantinos Zekentes and Konstantinos Zekentes and Vasilevskiy, {Konstantin V.} and Nikolaos Frangis",

booktitle = "Silicon Carbide and Related Materials 2016",

}

Chinone, N, Nayak, A, Kosugi, R, Tanaka, Y, Harada, S, Kiuchi, Y, Okumura, H & Cho, Y 2017, Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy. in K Zekentes, K Zekentes, KV Vasilevskiy & N Frangis (eds), Silicon Carbide and Related Materials 2016. Materials Science Forum, vol. 897 MSF, Trans Tech Publications Ltd, pp. 159-162, 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 16/9/25. https://doi.org/10.4028/www.scientific.net/MSF.897.159

Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy. / Chinone, Norimichi; Nayak, Alpana; Kosugi, Ryoji et al.
Silicon Carbide and Related Materials 2016. ed. / Konstantinos Zekentes; Konstantinos Zekentes; Konstantin V. Vasilevskiy; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. p. 159-162 (Materials Science Forum; Vol. 897 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy

AU - Chinone, Norimichi

AU - Nayak, Alpana

AU - Kosugi, Ryoji

AU - Tanaka, Yasunori

AU - Harada, Shinsuke

AU - Kiuchi, Yuji

AU - Okumura, Hajime

AU - Cho, Yasuo

PY - 2017

Y1 - 2017

N2 - Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO2/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO2/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C-V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.

AB - Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO2/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO2/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C-V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.

KW - Scanning nonlinear dielectric microscopy

KW - SiO/SiC interface

UR - http://www.scopus.com/inward/record.url?scp=85020080322&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020080322&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.897.159

DO - 10.4028/www.scientific.net/MSF.897.159

M3 - Conference contribution

AN - SCOPUS:85020080322

SN - 9783035710434

T3 - Materials Science Forum

SP - 159

EP - 162

BT - Silicon Carbide and Related Materials 2016

A2 - Zekentes, Konstantinos

A2 - Vasilevskiy, Konstantin V.

A2 - Frangis, Nikolaos

PB - Trans Tech Publications Ltd

T2 - 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

Y2 - 25 September 2016 through 29 September 2016

ER -

Chinone N, Nayak A, Kosugi R, Tanaka Y, Harada S, Kiuchi Y et al. Universal parameter evaluating SiO₂/SiC interface quality based on scanning nonlinear dielectric microscopy. In Zekentes K, Zekentes K, Vasilevskiy KV, Frangis N, editors, Silicon Carbide and Related Materials 2016. Trans Tech Publications Ltd. 2017. p. 159-162. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.897.159