TY - JOUR
T1 - Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga,Mn)As
AU - Yamanouchi, M.
AU - Ieda, J.
AU - Matsukura, F.
AU - Barnes, S. E.
AU - Maekawa, S.
AU - Ohno, H.
PY - 2007/9/21
Y1 - 2007/9/21
N2 - Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. For the ferromagnetic semiconductor (Ga,Mn)As, we have measured and compared such motions in the thermally activated subthreshold, or "creep," regime, where the velocity obeys an Arrhenius scaling law. Within this law, the clearly different exponents of the current and field reflect different universality classes, showing that the drive mechanisms are fundamentally different.
AB - Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. For the ferromagnetic semiconductor (Ga,Mn)As, we have measured and compared such motions in the thermally activated subthreshold, or "creep," regime, where the velocity obeys an Arrhenius scaling law. Within this law, the clearly different exponents of the current and field reflect different universality classes, showing that the drive mechanisms are fundamentally different.
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U2 - 10.1126/science.1145516
DO - 10.1126/science.1145516
M3 - Article
AN - SCOPUS:34748835778
SN - 0036-8075
VL - 317
SP - 1726
EP - 1729
JO - Science
JF - Science
IS - 5845
ER -