Upper yield stress of Si crystals at high temperatures

I. Yonenaga

doi:10.1149/1.1837021

Upper yield stress of Si crystals at high temperatures

I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 10⁴ cm^-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.

Original language	English
Pages (from-to)	L176-L178
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	8
DOIs	https://doi.org/10.1149/1.1837021
Publication status	Published - 1996 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1837021

Cite this

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abstract = "The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 104 cm-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.",

author = "I. Yonenaga",

year = "1996",

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N2 - The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 104 cm-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.

AB - The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 104 cm-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.

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DO - 10.1149/1.1837021

M3 - Article

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Upper yield stress of Si crystals at high temperatures

Abstract

ASJC Scopus subject areas

UN SDGs

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