Upper yield stress of Si crystals at high temperatures

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 104 cm-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.

Original languageEnglish
Pages (from-to)L176-L178
JournalJournal of the Electrochemical Society
Issue number8
Publication statusPublished - 1996 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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