The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-Si crystal of grown-in dislocations of 2 × 104 cm-2 were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 1996 Aug|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry