The use of a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], enabled to grow single-phase CuInGaSe2 solid solutions for high-efficiency solar cell application by the selenization of metal precursors without additional thermal annealing. Distinct from the case using Se vapor or H2Se gas, uniform CuInGaSe2 films were obtained from Cu-In-Ga metal precursors premixed with Se. In contrast, the films formed from Se-free precursors separated into two phases with different compositions. Photoluminescence spectra of approximately 2.0-μm-thick films at 77 K were dominated by the defect-related donor-acceptor pair and free electron-to-acceptor recombination emissions particular to the CulnGaSe2 films that are used for high conversion efficiency solar cells.
|Number of pages
|Physica Status Solidi (C) Current Topics in Solid State Physics
|Published - 2006
|15th International Conference on Ternary and Multinary Compounds, ICTMC-15 - Kyoto, Japan
Duration: 2006 Mar 6 → 2006 Mar 10