Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

Fujio Ishihara; Hiroshi Uji; Tatsuya Kamimura; Satoru Matsumoto; Hirofumi Higuchi; Shigefusa Chichibu

doi:10.1143/JJAP.34.2229

Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

Fujio Ishihara, Hiroshi Uji, Tatsuya Kamimura, Satoru Matsumoto, Hirofumi Higuchi, Shigefusa Chichibu

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C₂H₅)₄) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si_1-xGe_x:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (E_opt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide E_opt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH₂ and GeH₂ bonds in the film.

Original language	English
Pages (from-to)	2229-2234
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	5R
DOIs	https://doi.org/10.1143/JJAP.34.2229
Publication status	Published - 1995 May

Keywords

A-SiGe:H.C
ArF excimer laser
Narrow-gap material
Photo-CVD
Tetraethylgermane

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10.1143/JJAP.34.2229

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title = "Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films",

abstract = "A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)4) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (Eopt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide Eopt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.",

keywords = "A-SiGe:H.C, ArF excimer laser, Narrow-gap material, Photo-CVD, Tetraethylgermane",

author = "Fujio Ishihara and Hiroshi Uji and Tatsuya Kamimura and Satoru Matsumoto and Hirofumi Higuchi and Shigefusa Chichibu",

year = "1995",

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T1 - Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

AU - Ishihara, Fujio

AU - Uji, Hiroshi

AU - Kamimura, Tatsuya

AU - Matsumoto, Satoru

AU - Higuchi, Hirofumi

AU - Chichibu, Shigefusa

PY - 1995/5

Y1 - 1995/5

N2 - A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)4) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (Eopt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide Eopt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.

AB - A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)4) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H, C). The germanium composition, x, could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap (Eopt) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide Eopt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.

KW - A-SiGe:H.C

KW - ArF excimer laser

KW - Narrow-gap material

KW - Photo-CVD

KW - Tetraethylgermane

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DO - 10.1143/JJAP.34.2229

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5R

ER -

Use of tetraethylgermane in arf excimer laser chemical vapor deposition of amorphous silicon-germanium films

Abstract

Keywords

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