Defects in ammonothermal GaN have been studied using a monoenergetic positron beam. Through measurements of Doppler broadening spectra of the annihilation radiation, the major defect species was identified as a Ga vacancy coupled with impurities such as oxygen and/or hydrogen. Those defects were found to be stable even after annealing at 1000 °C. The shape parameter S for the Doppler broadening spectrum corresponding to positron annihilation at the surface was found to be decreased by illumination within energy ranges of 1.5-2.6 eV and 3.2-3.6 eV. This phenomenon is attributed to the suppression of recombinations between holes and electrons due to trapping centers, which can hold electrons for a long time, and a resultant accumulation of holes at the surface. Recovery of the S value required almost one day, but it was shortened by the annealing at 1000 °C.
- A1. Point defect
- A2. Single crystal growth
- B1. Nitrides
- B2. Semiconducting III-V materials