TY - JOUR
T1 - Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor
AU - Zhu, Minjie
AU - Li, Jinhua
AU - Inomata, Naoki
AU - Toda, Masaya
AU - Ono, Takahito
N1 - Funding Information:
Acknowledgments Parts of this work were performed in the Micro/ Nanomachining Research Education Center (MNC) and Micro System Integration Center (μSIC) of Tohoku University. This work was supported by the Council for Science, Technology and Innovation (CSTI) under the Cross-Ministerial Strategic Innovation Promotion Program (SIP). This work was supported in part by JSPS KAKENHI grant number 18J12689.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS 2 ) films based on sulfurization of sputtered Mo thin films. I-V characteristics indicate that V atom doping indeed decreases the resistivity of MoS 2 . Strain sensors based on V-doped MoS 2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS 2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance.
AB - This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS 2 ) films based on sulfurization of sputtered Mo thin films. I-V characteristics indicate that V atom doping indeed decreases the resistivity of MoS 2 . Strain sensors based on V-doped MoS 2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS 2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance.
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U2 - 10.7567/1882-0786/aaf5c4
DO - 10.7567/1882-0786/aaf5c4
M3 - Article
AN - SCOPUS:85059865414
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 015003
ER -